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Electrostatic Discharge Immune Storage Plate Structure for One-Device Cells

IP.com Disclosure Number: IPCOM000061656D
Original Publication Date: 1986-Sep-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Poplawski, E Silverman, R [+details]

Abstract

This article shows a non-critical process step which is added early in the fabrication of advanced one-device memory cell structures to provide a voltage-limiting diode. The diode protects the thin insulators from breaking down during subsequent process steps due to electrostatic discharge (ESD). Throughout the fabrication processes for integrated circuits, negative charges are generated at various steps, e.g., in plasma or reactive ion etch reactors, in spin drying machines, in ion implantation systems and in the handling and transportation of the product. Electrostatic charges accumulate on the conductors in the product to create an electric field which may cause insulator breakdown of the underlying storage node oxides.