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Simple MIRP Lift-Off Process for Hot Metal Deposition Disclosure Number: IPCOM000061730D
Original Publication Date: 1986-Sep-01
Included in the Prior Art Database: 2005-Mar-09

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Chow, MF Chow, M Schwartz, GC [+details]


A process change has reduced the modified image reversal process (MIRP) lift-off time and eliminated the need for an ultrasonic step for the hardened MIRP resists. The new method involves the addition of a high temperature bake after UV hardening. In the manufacture of semiconductors MIRP has been used as an effective metal deposition process. With the process an image hardening step is required to stabilize the image during the hot process. Under conventional procedures, long soak times with ultrasonic agitation are normally required to complete the step. A simple high temperature bake has been proposed which is done following the standard lithographic processing and UV hardening. This results in a substantial reduction in the lift-off time, with it also being possible to eliminate ultrasonic agitation.