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Several Electrical Measurements of the Concentration of Several (Sodium and Potassium) Ionic Contaminants in Thin Dielectric Films at Constant Temperature

IP.com Disclosure Number: IPCOM000061804D
Original Publication Date: 1986-Sep-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Guerin, F Le Dudal, R [+details]

Abstract

This article describes a new measurement technique. It is able to measure Na+ and K+ ion densities in MOS structures with the following advantages: 1. short measurement time (N 10 mn) 2. good accuracy : Na+ down to 109 ions/cm 3. does not require the use of very high temperature . price and reliability of tooling are improved . avoid Al/SiO2 reactions which creates current leakages around 400ŒC . keep C-V dip (does not flatten the curve) in the depletion state, still providing information on the electronic state of the interface. Ionic contaminants in thin dielectric films are very detrimental for devices in the microelectronic technology, causing electrical parameter instability.