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Schottky-barrier Structure Employing Two Metal Alloys With Different Barrier Heights

IP.com Disclosure Number: IPCOM000061933D
Original Publication Date: 1986-Aug-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Hsieh, CM Wang, WY [+details]

Abstract

The structure described consists of a Schottky-barrier diode (SBD) in a central area surrounded by a ring of higher-barrier metal forming another SBD in parallel electrically. The structure minimizes voids which are common in ordinary SBD processing. In addition, the wider depletion region of the high-barrier SBD acts as a guard ring to minimize fringe fields of the central SBD and minimize leakage.