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Efficient Calculation of Boron Depletion by a Growing Oxide

IP.com Disclosure Number: IPCOM000061934D
Original Publication Date: 1986-Aug-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Hsieh, CM O'Brien, RR [+details]

Abstract

In the new method described, to efficiently calculate the boron depletion of doped silicon which is oxidized, the boundary condition at the interface is calculated. This is in contrast to the more conventional method which uses calculation of the boron diffusion in the oxide.