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A Novel Silicon Dioxide Characterization Device Which Uses Phosphor Luminescence

IP.com Disclosure Number: IPCOM000061947D
Original Publication Date: 1986-Aug-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Alexander, SL [+details]

Abstract

The location and size of defects in a silicon dioxide film can be detected through the use of an electroluminescent layer. Referring to the figure, a layer of silicon dioxide 10 is grown silicon substrate 12. On top of the silicon dioxide layer 10, a thin film 14 of a suitably doped phosphor, such as ZnS with Cu and Cl, is deposited, followed by a thin, optically transparent metallic layer 16 (i.e., silver, gold, etc.).