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Fabrication of Relief-free Electrical Patterns Using High Intensity Lasers

IP.com Disclosure Number: IPCOM000061963D
Original Publication Date: 1986-Aug-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Chen, M Jipson, V Marinero, E [+details]

Abstract

When a suitable matrix hosting islands or particles of a metallic species strongly absorbs the extremely large photon fluxes that a high power laser can deliver in very short times (typically nanoseconds), the absorption process leads to a large temperature gradient between the top surface layers where most of the absorption occurs and the bulk of the material. This results in the segregation of the elemental absorber within the thin solid film. When the concentration of the absorber and matrix material and the illumination of the exposed area are correctly chosen, this segregation phenomenon leads to the formation of electrically conducting structures without relief formation. Micron structures can therefore be attained by illuminating the desired material via a lithographic mask.