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Process for Forming Smooth Conformal Metal With Backside Removal

IP.com Disclosure Number: IPCOM000061984D
Original Publication Date: 1986-Sep-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Cronin, JE Hartswick, JJ Lee, PP [+details]

Abstract

This paper relates to a process by which a conformal metal is formed by chemical vapor deposition to a thickness greater than that required followed by a plasma etch-back process, such that the resulting film is smooth on the front side of a semiconductor wafer while being removed from the back side of the wafer.