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Subpicosecond Optical Sampling Gate

IP.com Disclosure Number: IPCOM000062058D
Original Publication Date: 1986-Oct-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Van Zeghbroeck, BJ [+details]

Abstract

The transistor-like sampling gate structure with emitter, base and collector electrodes comprises two potential barriers (emitter-base and base-collector). The signal to be measured is applied to the emitter and affects the effective height of the base-collector barrier. A short optical sampling pulse causes electrons in the emitter to be excited. They gain sufficient energy to be injected across the emitter-base barrier into the base region. Only those electrons with a large enough energy can traverse the base-collector barrier. The device distinguishes between electrons with different energies. Fig. 1 shows the band diagram of the sampling gate.