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YxTiy ALLOY CONTACTS FOR USE IN HYDROGENATED AMORPHOUS SILICON OPTO-ELECTRONIC DEVICES

IP.com Disclosure Number: IPCOM000062113D
Original Publication Date: 1986-Oct-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Bullock, DB Kanicki, J [+details]

Abstract

A direct ohmic contact to undoped and n-type doped hydrogenated amorphous silicon (a-Si:H) films can be made by E-beam evaporated YxTiy alloys. The a-Si:H was prepared by a homogenous chemical vapor deposition (HOMOCVD) method which has been described previously in the literature [*]. This direct ohmic contact (i.e., without n+-layer at the interface) of very high quality can be used in a-Si:H opto-electronic devices, such as thin film transistors (TFT), Schottky barrier diodes (MS, MIS) or p-i-n junctions (PIN, PN). It should be pointed out that the Yx Tiy alloys make better ohmic contacts than each element (Y or Ti) separately. Therefore, all combinations of elements, which separately give ohmic contacts to a-Si:H will make ohmic contacts to the same materials of comparable or better quality.