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Semiconductor Two-Dimensional Hole Gas Heterostructures

IP.com Disclosure Number: IPCOM000062158D
Original Publication Date: 1986-Oct-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Esaki, L Kuan, TS Mendez, EE Wang, WI [+details]

Abstract

The formation of high-mobility two-dimensional (2D) electron gases at the interface of GaAs-GaAlAs heterojunctions constitutes the foundation of High Electron Mobility Transistors (HEMT). Another heterostructure is the High Hole Mobility Transistor (HHOMT) that is based on a two- dimensional hole gas and has the possibility of accomplishing complementary logic. So far, the 2D electron gas has been achieved by doping with Si a GaAlAs layer grown epitaxially on undoped GaAs. Similarly, the 2D hole gas has been formed by using Be instead, as a dopant. Silicon is in principle an amphoteric impurity for GaAs, but under normal growth conditions on (100) surfaces it behaves as a donor.