Browse Prior Art Database

Fully Integrated DTL

IP.com Disclosure Number: IPCOM000062169D
Original Publication Date: 1986-Oct-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Knepper, RW Wong, RC [+details]

Abstract

This article describes the improvement in circuit density accomplished by the utilization of P-type Schottky barrier diodes (SBDs) as input diodes as well as pull-up "resistors" in diode-transistor logic (DTL) circuits. SBDs on N-type silicon have been widely used in bipolar circuit designs. SBDs on P-type silicon have not been extensively explored even though they exhibit similar electrical characteristics when proper metallurgies are utilized. The improvement in circuit densities is accomplished because: ΠAll components of the circuit are integrated over the same Nburied region ΠThe circuit has no reach-through contacts; ΠBase contacts are not necessary; ΠNo isolation is needed for the N+ buried layer. The figure illustrates a proposed circuit with all devices integrated into one base diffusion.