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Process for Improving Yield and Reliability of Thin Insulator Films

IP.com Disclosure Number: IPCOM000062170D
Original Publication Date: 1986-Oct-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Nguyen, TN Ray, AK [+details]

Abstract

As the channel length of MOSFETs is scaled down to submicron range, insulator films of about 100 ˜ or thinner are required for transfer gates and storage capacitors. Such thin films, however, tend to have low yield and reliability problems. The yield reduction is caused by imperfections, such as pin holes and latent defects. The former are responsible for hard-wired shorts, and the latter are responsible for premature breakdown at low currents and fields. The reliability problems result from the low dielectric strength of the thin insulators. This article describes a process for improving the yield and reliability of thin insulator films utilizing a heat pulse system. Thermal oxide was grown on 3.