Browse Prior Art Database

Semiconductor Memory Device

IP.com Disclosure Number: IPCOM000062336D
Original Publication Date: 1986-Nov-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Wordeman, MR [+details]

Abstract

This article relates generally to storage devices and, more particularly, to cryogenic bistable devices. A bistable field-effect transistor memory element can have two stable states, one conductive and one resistive, when using the phenomenon of impurity freeze-out. The device state is altered electrically and read out non-destructively. Measurements of free carrier concentration as a function of temperature and doping have shown that activation energy for impurity ionization is reduced for high impurity concentrations. Lanyon [*] suggests that the effect may be due to the screening effects of donor- electron interactions.