Browse Prior Art Database

Photoconductive Switch

IP.com Disclosure Number: IPCOM000062488D
Original Publication Date: 1986-Nov-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Brady, MJ Gallagher, WJ Speidell, JL [+details]

Abstract

A fast photoconductive switch useful as a source of pulses in semiconductor testing is constructed using a device quality layer over an insulator layer on a substrate. The device is constructed using single crystal silicon (100) that is masked using a heavy metal with high temperature properties, i.e., tungsten. This heavy metal mask allows for selective implantation within the crystal and is capable of high temperature annealing (1200ŒC) to generate a buried dielectric of either silicon dioxide or silicon nitride, as illustrated in Fig. 1. The device may be constructed on the kerf of a wafer. The tungsten metal is removed following annealing, and the silicon wafer is then processed further to place circuitry elsewhere on the wafer.