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SRAM Cell Stability Enhancement Via DRAM Technology

IP.com Disclosure Number: IPCOM000062505D
Original Publication Date: 1986-Dec-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Houghton, RJ Penoyer, RF [+details]

Abstract

This article concerns the use of dynamic random-access memory (DRAM) charge-storage technology for the unique purpose of increasing static random-access memory (SRAM) cross-coupled cell node capacitance and thereby increasing cell stability to protect against data loss due to alpha particle radiation. 2 p. The need for storage node capacitance enhancements is ever increasing since high SRAM densities cause cell stability reductions, making the cell more susceptible to soft errors. Generally SRAM technology advances have reduced cell area and consequently reduced the charge stored on a cell's internal nodes. Fig. 1 shows a schematic of a typical cross-coupled SRAM cell structure with its parasitic capacitance at nodal points A and B.