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Ion Source for Strong Magnetic Fields

IP.com Disclosure Number: IPCOM000062524D
Original Publication Date: 1986-Dec-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Cuomo, JJ Kaufman, HR Rossnagel, SM Yee, DS [+details]

Abstract

A broad-beam, multi-aperture ion source is useful for a variety of sputter cleaning, etching, and deposition operations. The most usual type of broad-beam ion source uses electron bombardment to generate ions and cannot be operated in a strong background magnetic field. The herein-described device permits such operation by confining the ion production to a small volume (volume 9 in the figure) compared to the much larger total discharge chamber volume 8, then permitting the ions to expand from this small volume in a controlled manner to provide an approximately uniform ion current density at the screen and accelerator grids (16 and 18 in the figure) where the acceleration of the ion beam takes place.