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Method to Increase Sensitivity of Negative Resists

IP.com Disclosure Number: IPCOM000062569D
Original Publication Date: 1986-Dec-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Maldonado, JR Paraszczak, JR [+details]

Abstract

A method for increasing the throughput of X-ray lithography systems or electron beam systems using negative resists is provided wherein entire resist-covered wafers are pre-exposed to a relatively low flux. It has been found that a low dose of radiation does not cause a substantially thicker resist layer to remain after development in areas which are not further exposed to radiation. Thus, by pre-exposing the entire resist-covered wafer to a low dose of radiation, the dose in pattern regions intended to be exposed can be correspondingly reduced during exposure with a mask. As a result, throughput is improved, thereby effectively increasing resist sensitivity.