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Resonant Tunneling Transistor

IP.com Disclosure Number: IPCOM000062601D
Original Publication Date: 1986-Dec-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Price, PJ [+details]

Abstract

In resonant tunneling devices electrons tunnel through a double-barrier and enhanced resonant tunneling can occur through a level of the "quantum well" above the ground level, as well as through the ground level. A three-terminal device based on resonant tunneling is constructed by making use of excited-level tunneling. The device is a heterostructure with a double barrier between doped "emitter" (E) and "collector" (C) regions, with the barrier structure doped so that electrons fill the sub-band of the ground level of the quantum well to an energy below that of the second level.