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Multilayer Metallurgy Incorporating a Reactive Ion Etch Stop for Aluminum on Polyimide

IP.com Disclosure Number: IPCOM000062678D
Original Publication Date: 1986-Dec-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Bausmith, RC Holland, KL [+details]

Abstract

Where it is desired to pattern aluminum or aluminum alloy films atop polyimide by reactive ion etching (RIE), an etch stop film comprised of a material which is not etched by a chlorinated or oxygenated etch plasma but can be etched in a fluorinated plasma is interposed between the aluminum and the polyimide. Referring to the figure, a thin layer of an etch stop material such as tungsten (W) is deposited on the polyimide 2. The aluminum- based film 4 is next deposited. Following photoresist deposition and patterning, the aluminum film 4 is etched in a chlorinated RIE process leaving the aluminum structures, e.g., 4, with photoresist 6 on top. Photoresist 6 is next removed by an oxygen plasma RIE process step.