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Improved Schottky Barrier Diode Process Yields

IP.com Disclosure Number: IPCOM000062735D
Original Publication Date: 1986-Nov-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Dalal, HM Malaviya, SD [+details]

Abstract

A process improvement in the fabrication of Schottky Barrier Diodes is described. The process improvement involves the coating of, or passivation of, contact areas of the diode structure, to prevent undesirable chemical and physical reaction contamination in the area that result from follow on process by-products. The proper choice of the coating or passivation material isolates the surface of interest, from the undesirable process by-products, does not contaminate the surface being protected, is compatible with the process environment surrounding the diode fabrication, and is easily removed when the process step(s) is completed.