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Ge Channel High Electron Mobility Transistor

IP.com Disclosure Number: IPCOM000062803D
Original Publication Date: 1986-Dec-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue

IBM

Related People

Authors:
Freeouf, JL Jackson, TN [+details]

Abstract

The problems of doping, load devices and contacts are simplified in a high electron mobility transistor by providing a channel of germanium with GaAs as shown as an example in the figure. (Image Omitted)