Browse Prior Art Database

Ge Channel High Electron Mobility Transistor Disclosure Number: IPCOM000062803D
Original Publication Date: 1986-Dec-01
Included in the Prior Art Database: 2005-Mar-09

Publishing Venue


Related People

Freeouf, JL Jackson, TN [+details]


The problems of doping, load devices and contacts are simplified in a high electron mobility transistor by providing a channel of germanium with GaAs as shown as an example in the figure. (Image Omitted)