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The problems of doping, load devices and contacts are simplified in a high electron mobility transistor by providing a channel of germanium with GaAs as shown as an example in the figure. (Image Omitted)
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Ge Channel High Electron Mobility Transistor
The problems of doping, load devices and contacts are simplified in a high
electron mobility transistor by providing a channel of germanium with GaAs as
shown as an example in the figure.
Band offsets for Ge/GaAs and Ge/AlGaAs heterojunctions are cummutative
for the (100) orientation.
Bulk Ge has relatively high mobilities for both electrons and holes, especially
at LN temperatures. High quality Ge/AlGaAs heterojunctions exhibit the same
mobility enhancements observed at GaAs/AlGaAs heterojunctions. The hole
mobilities are also impressive, making "load" devices possibly as fast as drivers.
The capabilities of complementary device structures are enhanced.
There are very good contact resistances to both degenerate Ge and to Ge
epitaxially grown onto GaAs. Since high-dose implants in Ge can be annealed at
relatively low temperatures, formation of self-aligned FETs with low contact
resistivity is facilitated.
Gate leakage current is strongly reduced from that of a normal
GaAs-gate FET structure since the conduction band offset for Ge/GaAs
is about 0.2V larger than that of GaAs/AlGaAs, and the valence band
offset increases by about 0.55V. This extends the acceptable
temperature range for Ge channel FETs to beyond 300OEK.