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Defect-Free Silicon on Insulator by Oxidized Porous Silicon

IP.com Disclosure Number: IPCOM000062828D
Original Publication Date: 1985-Jan-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Nesbit, LA [+details]

Abstract

High pressure oxidation can be used with oxidized porous silicon (OPS) techniques to produce defect-free, low warpage thin silicon on insulator (SOI) structures. The formation of an SOI structure by means of OPS usually results in the formation of defects in the silicon islands during the oxidation of the porous silicon. The defects that usually form are dislocations, with a strong edge component and stacking faults, with their attendant partial dislocations. The dislocations are thought to arise from the bending of the islands, as the porous silicon or oxide may densify under the islands during the oxidation of the porous silicon or during subsequent hot processing. By oxidizing the porous silicon under the silicon islands at a pressure of 10 atmospheres, and at a temperature of 800ŒC, no defects form in the silicon islands.