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Horizontal Multijunction Devices on Transparent Substrates

IP.com Disclosure Number: IPCOM000062846D
Original Publication Date: 1985-Jan-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Hovel, HJ [+details]

Abstract

Large area photovoltaic devices using horizontal multijunctions can be improved by directing the incident light through the substrate and through a lattice accommodation region into each active p-n junction region so that full metal contact layers can be made on the surface. At each active region, the external extrinsic conductivity-type region is offset to permit contact formation to the lower region. The structure is shown in the figure using GaAs n and p as the active regions forming the junction, GaAlAs as the lattice accommodation region, and Al2O3 as the transparent substrate.