Bipolar Integrated Circuit Process Incorporating Deep Trench Isolation
Original Publication Date: 1985-Jan-01
Included in the Prior Art Database: 2005-Feb-18
A bipolar process providing high-density integrated circuits is described in this article. This process includes polyimide-filled deep trenches for device isolation. Wherever substrate contacts are desired at the top surface of the integrated circuit chips, a means is included for a vertical P doped column providing access to the P substrate. During ion implantation of P channel stoppers beneath the isolation trenches, the Schottky barrier diode regions and emitter regions of NPN transistors are carefully protected in the described process. Further, the process ensures a continuous silicon nitride protection at the trench peripheries besides all non-contact regions at the top surface.