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Method of Forming a Thick Photoresist Mask

IP.com Disclosure Number: IPCOM000062924D
Original Publication Date: 1985-Jan-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Guenther, G Meyer, DW Pressler, GH Reitz, L [+details]

Abstract

The mask is formed from a thin photoresist layer and an overlying photolaminate. A thin blanket layer of a liquid, positive photoresist is spun onto a substrate, the vertical differences of whose topography are of the order of 8 mm. This is followed by the blanket deposition of the photolaminate. The resultant structure is exposed according to the respective pattern and developed under conditions appropriate for the photolaminate. The photoresist layer, exposed in the openings of the pattern, is removed by blanket exposure and plasma etching. The mask is removed by a process suitable for the photolaminate. The firmly adhering mask is used to additively plate substrates with thick metallization patterns of a good edge definition.