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Wafer Holder for Single-Side Deposition of a Polysilicon Film Disclosure Number: IPCOM000062989D
Original Publication Date: 1985-Jan-01
Included in the Prior Art Database: 2005-Feb-18

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Carle, JF Cazcarra, V [+details]


A major semiconductor device manufacturing requirement is to eliminate metallic impurities from the active side of silicon substrates, since they reduce minority carrier lifetime and degrade device performance. Such a requirement can be fulfilled by means of a polycrystalline or amorphous layer on the back-side of the substrates. These films are usually thermally grown or deposited thru chemical vapor deposition (CVD) or sputtering. In these cases the active side can be affected by the film growth or damaged by contacting a hard surface. It is therefore almost necessary to have a subsequent polishing of the active side of the substrate to develop a perfect monocrystalline surface.