Browse Prior Art Database

Electron Discharging for Electron Beam Exposure

IP.com Disclosure Number: IPCOM000063009D
Original Publication Date: 1985-Jan-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Chiu, GT Kitcher, JR Witko, D [+details]

Abstract

This process uses a thin metal layer on top of single or multiple photoresist structures to remove electron beam charge build-up, thus eliminating pattern distortion caused by charging effects. Future technology requires electron beam exposure to achieve smaller ground rules. Chip wiring uses an insulator 1, such as quartz, to separate metal line interconnections 2 from layer-to-layer. Multilayers of photoresist 3, exposed by electron beam, are used to form the patterns of these layers. Electrons deposited during electron beam exposure have no place to dissipate their charges, thus causing distortion of the beam's precise target by electron charge build-up. This problem becomes more severe as the total insulator thickness approaches the depth range of the electrons at the exposure voltage.