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Integrated Capacitive Measurement Disclosure Number: IPCOM000063020D
Original Publication Date: 1985-Feb-01
Included in the Prior Art Database: 2005-Feb-18

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Scheuerlein, RE Tamlyn, R [+details]


The capacitive components of the bit line structure on FET Dynamic RAM designs are too small to be monitored by conventional means. However, this capacitance is an important parameter to monitor on a routine basis. The novel test structure described requires only simple voltage measurements to indicate the desired capacitance values. Fig. 1 shows a diagram of the structure that would be included in the kerf region of the wafer that is to be monitored. A known capacitance Ck and the unknown capacitance Cu are included in the structure. If Vo is fixed, forcing a voltage change of V1 on the Vin net will produce a voltage change Va on the Vout net.