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USE OF AMORPHOUS SILICON TO FORM SUPERCONDUCTING V3Si

IP.com Disclosure Number: IPCOM000063070D
Original Publication Date: 1985-Feb-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Lacey, JA Psaras, PA Tu, KN Wittmer, M [+details]

Abstract

V3Si is a silicide which is known to be superconducting. The material exhibits a high transition temperature and has usually been formed in combination with other VixSix non-superconducting compounds on crystalline silicon and polycrystalline. If V3Si is formed in coexistence with a non-superconducting VxSix compound, the critical transition temperature will be decreased and discontinuity will be formed in the film which will adversely affect the superconducting properties. In order to avoid this, continuous films of superconducting V3Si can be formed by utilizing amorphous silicon as one of the major constituents. A V layer is electron beam evaporated onto a substrate at room temperature, where the substrate can be arbitrarily chosen. Suitable examples of substrates include SiO2 and Al2O3 .