Browse Prior Art Database

Solder Terminal for Semiconductor Devices

IP.com Disclosure Number: IPCOM000063123D
Original Publication Date: 1985-Feb-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Levine, E Ordonez, J Rothman, L [+details]

Abstract

Solder joints for semiconductor devices may be subject to vibration and stresses in a semiconductor package provided with thermal conduction structure designed to provide cooling. Under extreme conditions the possibility of cracking of the quartz layer supporting the solder joints exists. This solder joint is designed to better withstand vibration and stresses. The solder ball terminal 10 formed on silicon device 12 with an overlying quartz layer 14 consists of a chromium layer 16, a copper layer 18 and a solder mound terminal 20. Prior to forming the solder terminal 20, a layer 22 of polyimide is deposited on the surface of device 12 so that the peripheral area of copper layer 18 is covered. The diameter of layer 18 is approximately 6 to 6.5 mils, while the opening for forming solder terminal 20 is on the order of 5 mils.