Browse Prior Art Database

Metal-Schottky Barrier Photovoltaic Device

IP.com Disclosure Number: IPCOM000063145D
Original Publication Date: 1985-Feb-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Cuomo, JJ Van Vechten, JA Woodall, JM [+details]

Abstract

A Metal-Schottky barrier photovoltaic device in which the impinging radiation is primarily absorbed by the metal layer of a dielectric antireflection layer will efficiently convert light into electrical power, e.g., current and voltage, because: (1) electrons which are excited to energies of 1-2 eV above the Fermi level have inelastic scattering (mean free paths of 500-1000 ˜ at room temperature); and (2) metals such as W, Ti, Mo can be made to have an absorptivity of over 70% when coated with an appropriate transparent dielectric antireflective layer. The device is as shown in Fig. 1, with the energy diagram as in Fig. 2. The structure operates as follows: Photons pass through the antireflecting coating and are highly absorbed by the metal layer, raising the energy of the electrons by the amount hv.