Browse Prior Art Database

Si-Ge ALLOY LAYERS FOR GaAs GROWTH ON Si AND Al203

IP.com Disclosure Number: IPCOM000063147D
Original Publication Date: 1985-Feb-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Hovel, HJ Kuech, TF [+details]

Abstract

An improved substrate on which GaAs and GaAlAs for devices may be epitaxially grown is a silicon substrate with a Ge-Si alloy layer of the order of 1 or 2 microns graded from pure silicon at the substrate toward pure Ge at the interface with the GaAs.