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Temperature Approach for Gap Filling Process During Thin Film Wiring Fabrication

IP.com Disclosure Number: IPCOM000063173D
Original Publication Date: 1985-Feb-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Min, BY Tong, HM [+details]

Abstract

A method is provided in which micron-size gaps are filled without any voids and bubbles, by heating high molecular weight polyimide solutions. This gap-filling process protects vacuum-deposited trench metals from corrosion and achieves better planarization between consecutive dielectric layers. Polyimide is inserted in the gaps or trenches on the surface of a substrate in the form of a polyimide prepolymer solution which is heated with the substrate prior to or during spinning to lower the viscosity to form a layer having a flat top surface. The polymer is then cured by continued heating of both the solution and the substrate. The result is the planarization of trenches and planarization of packaging for semiconductor chips and electronic devices with multilevel metallurgy.