Chrome Source Preheating
Original Publication Date: 1985-Mar-01
Included in the Prior Art Database: 2005-Feb-18
This disclosure is directed to a modification in the process steps involved with the sputter cleaning operation in semiconductor wafer manufacturing. The introduction of a chrome preheating step before the argon gas fill step reduces the amount of water vapor available in the chamber to produce oxides at the material interfaces. The reduction of the oxides improves the process yield for the contact resistance parameter. The addition of the chrome preheat step does not have any effect on the other process steps. The preheating cycle is not critical in temperature or time duration, but must reach the melting point of the source, e.g., 1812ŒC, for chrome. There are no special requirements placed on the equipment to exhaust the H2O vapors.