Browse Prior Art Database

Photoconductive Switch

IP.com Disclosure Number: IPCOM000063331D
Original Publication Date: 1985-Mar-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Chi, CC Halbout, JM Loy, MM Tsuei, CC [+details]

Abstract

This article relates generally to photoconductive switches and more particularly to the fabrication of such switches having faster response and greater sensitivity. In constructing a photoconductive switch, a choice is made either to provide a clean crystalline semiconductor for long carrier lifetime to obtain high photoconductivity or to add various dopants to shorten carrier lifetime to obtain high speed response. Since the two characteristics are, in essence, opposite, photoconductivity or response time can be obtained only at the expense of the other. An improved switch can be constructed by using a multilayered semiconductor having alternating layers of high-mobility (crystalline) and high-speed (amorphous) semiconductors.