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Photon-Assisted Programming Technique for Polysilicon Fuses and Anti-Fuses

IP.com Disclosure Number: IPCOM000063354D
Original Publication Date: 1985-Mar-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Lu, NC Lu, CY [+details]

Abstract

This article relates generally to a technique for programming circuit protection devices in the integrated circuits environment. Still more particularly, it relates to a technique for programming polysilicon fuses or anti-fuses which uses any suitable photon source to generate excess carriers in the polysilicon during a programming period. A substantial increase in yield in integrated circuits can be achieved if programmable devices are used to replace defective circuit blocks. Electrically programmable devices, such as polysilicon fuses and anti-fuses, have been proposed. When a certain level of power is applied across such a device, a polysilicon fuse switches from a highly conductive state to an open circuit, while a polysilicon anti-fuse switches from a low conductive state to a very high conductive state.