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Highly Resistive Integrated Semiconductor Resistor Structure Disclosure Number: IPCOM000063357D
Original Publication Date: 1985-Mar-01
Included in the Prior Art Database: 2005-Feb-18

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Related People

Berger, R Klein, W Klink, E Wernicke, FC [+details]


Passive isolation technology is used to realize a resistor structure requiring little semiconductor area. This resistor structure comprises two separate resistors taking the form of first conductivity meander-shaped semiconductor zones (base diffusion zones) on top of a common, highly doped second conductivity semiconductor layer (subcollector zone). Such a structure permits the integration of a contact zone (guard ring zone) for the semiconductor layer. The layout of such a resistor structure is shown in the plan and sectional views of Figs. 1A and 1B. An N- epitaxial layer 2 with a continuous buried N0 subcollector zone 5 is deposited on a P- substrate 4. Epitaxial layer 2 has a P base zone 1 forming the resistor zone.