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Materials for Photon-Gated Holeburning

IP.com Disclosure Number: IPCOM000063417D
Original Publication Date: 1985-Mar-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Macfarlane, RM Shelby, RM [+details]

Abstract

A class of materials for photon-gated holeburning has been found. These consist of impurity ions or molecules such as rare earth ions, transition metal ions or organic molecules doped into a matrix which is such that an inhomogeneously broadened electronic transition 1 T 2 , of peak frequency 10 and width Q, lies below the conduction band of the host. Irradiating at 112710 within the band width Q with a low power laser does not induce holeburning. At high intensities, however, a second photon is absorbed from the electronic state 2 , leading to ionization of the impurity. The electron removed from the impurity is then rapidly trapped. A hole is burned at 112 when the inhomogeneous width Q is greater than the laser bandwidth. Holeburning by such a mechanism has been observed in the system Eu2+:CaF2 .