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Superconductor-Semiconductor Tunnelling Structures

IP.com Disclosure Number: IPCOM000063451D
Original Publication Date: 1985-Mar-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Gallagher, WJ Kleinsasser, AW Raider, SI [+details]

Abstract

Semiconductor layers, especially III-V compounds, provide barrier layers for superconducting tunnel junctions that have low barrier heights. The semiconductor surface can be made resistant to the damage of plasma-aided deposition techniques by the use of a thin layer of normal metal, such as Al or W, on the semiconductor layer, such as GaInAs. The film thickness is chosen so that the film is superconducting due to the superconductor's normal proximity effect.