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Simple Method to Create Tapering Trenches Disclosure Number: IPCOM000063484D
Original Publication Date: 1985-Mar-01
Included in the Prior Art Database: 2005-Feb-18

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Chin, D [+details]


This article relates to the fabrication of integrated circuits and more particularly to a process for the isolation of unipolar or bipolar devices in such circuits. Still more particularly it relates to a method of forming tapered trenches which can be filled without voids. Referring now to the figure, there is shown a cross-sectional view of a semiconductor substrate of silicon on which nitride 1 and oxide 2 layers are chemically deposited on a thermally grown oxide 3, then patterned and etched in a well-known way.