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Quick Oxidation of Integrated Circuit Wafers

IP.com Disclosure Number: IPCOM000063492D
Original Publication Date: 1985-Mar-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Weinberg, ZA [+details]

Abstract

Quick thermal oxidation may be used to grow oxides on polysilicon, avoiding deep penetration problems of slower thermal oxidation. It is possible to heat up silicon wafers to high temperatures (>1000ŒC) for short times of a few seconds by using lamps. It is possible to oxidize silicon wafers by this technique. It is known that thermal oxides in polysilicon are poor, partially because the long-time furnace oxidation penetrates deeply into grain boundaries. This may be avoided by the short-time process of thermal oxidation with lamps.