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Quick Oxidation of Integrated Circuit Wafers Disclosure Number: IPCOM000063492D
Original Publication Date: 1985-Mar-01
Included in the Prior Art Database: 2005-Feb-18

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Weinberg, ZA [+details]


Quick thermal oxidation may be used to grow oxides on polysilicon, avoiding deep penetration problems of slower thermal oxidation. It is possible to heat up silicon wafers to high temperatures (>1000ŒC) for short times of a few seconds by using lamps. It is possible to oxidize silicon wafers by this technique. It is known that thermal oxides in polysilicon are poor, partially because the long-time furnace oxidation penetrates deeply into grain boundaries. This may be avoided by the short-time process of thermal oxidation with lamps.