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Side and Bottom Wired Silicon Integrated Circuit Disclosure Number: IPCOM000063797D
Original Publication Date: 1985-Apr-01
Included in the Prior Art Database: 2005-Feb-18

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Van Vechten, JA [+details]


When discrete Si devices are connected to form integrated circuits, connection on the chip surface consumes chip surface that otherwise could provide higher densities of devices and causes difficulty in routing. Using the sides and bottom of the chip for these interconnections saves much surface area, relieving the routing problem. With the increasing scale of integration the problem of connecting discrete devices grows. It is often a rate-limiting step in the progress of VLSI technology. As commonly used Si wafers become larger, they also become thicker. At present 6-inch wafers are 0.6 mm thick and 8-inch wafers are to be 1 mm thick.