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High Thermal Diffusivity Cap for Lateral Melt SOI Growth

IP.com Disclosure Number: IPCOM000063825D
Original Publication Date: 1985-Apr-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Sedgwick, TO [+details]

Abstract

This article relates generally to a method for forming single crystal semiconductor materials and more specifically to a method for forming single crystal silicon layers on an insulator which uses lateral scanning of a heat source. Still more particularly it relates to the use of a high thermal diffusivity cap over the melt which dissipates heat so that a high thermal gradient is maintained over long distances from a growth seed. One of the leading prior-art techniques for making Silicon-On- Insulator (SOI) material involves lateral scanning of a heat source which melts a small volume of silicon which in turn crystallizes and grows epitaxially and laterally between two layers of SiO2 . Fig. 1 is a cross-sectional view of a silicon wafer during crystal growth.