Browse Prior Art Database

Semiconductor Hot Electron Transistor With a Resonant Tunneling Emitter

IP.com Disclosure Number: IPCOM000064025D
Original Publication Date: 1985-May-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Heiblum, M Nathan, MI [+details]

Abstract

A hot electron transistor is a double barrier device which acts like a bipolar transistor but has a low base resistance and no minority carrier effects. It consists of three conducting layers separated by two insulating barriers. Hot electrons cross the first barrier by tunneling or thermionic emission and are collected over the top of the second barrier. To get maximum current gain it is desirable to have as nearly a monoenergetic beam of hot electrons from the emitter as possible to just surmount the collector barrier. Electrons at higher energies are more likely to be scattered and lost, and those at lower energy cannot surmount the collector barrier. A method for obtaining a monoenergetic beam is to use a resonant double tunneling barrier, as shown in the drawing.