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PROCESS FOR PRODUCING CORROSION INHIBITION OF NiP-PLATED AlMg SUBSTRATES

IP.com Disclosure Number: IPCOM000064200D
Original Publication Date: 1985-Jun-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Brezoczky, B Doss, SK Duke, PJ [+details]

Abstract

This invention proposes the use of the photochemical vapor deposition (PVD) of SiO2 and/or Si3N4 films as a corrosion protection on a NiP-plated substrate. The deposition of SiO2 and/or Si3N4 films on NiP provides a reliable structure for the electronic industry where NiP is being used as a hard layer. This invention can also be greatly used in the petroleum industry and particularly in oil well drilling, where thick NiP coating on metal pipes is being used. Silicon nitrides and oxides can be deposited at low temperature (50ŒC) by ultraviolet (UV) low energy. The stoichiometry of the reactions is written below: (Image Omitted) The process has been described by S. W. Peters, F. C. Gebhart and T. C. Hall in Solid State Tech . Journal 9, 121-126 (1980).