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Fabrication of Thin Layers of Silicon Oxides (Nitrides) by Ion Implantation

IP.com Disclosure Number: IPCOM000064201D
Original Publication Date: 1985-Jun-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Baier, H Elsner, G Hinkel, H [+details]

Abstract

Extremely thin layers of silicon oxides (nitrides) are produced by implanting oxygen (nitrogen) ions into silicon. The stoichiometric composition is controlled by additionally implanting silicon ions. The stoichiometric composition of thin layers of silicon oxides (nitrides), produced by standard oxygen (nitrogen) implantation into silicon, is determined by the sputter yield. Therefore, special stoichiometric compositions require the additional implantation of a noble gas (eventually at oblique incidence) or the simultaneous implantation of atomic and molecular ions of oxygen (nitrogen). In the latter case, the stoichiometric range obtainable is small.