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Preparation of Silicon Carbide/Silicon Nitride Mixed Ceramic Films

IP.com Disclosure Number: IPCOM000064243D
Original Publication Date: 1985-Jun-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Hiraoka, H [+details]

Abstract

Mixed silicon carbide/silicon nitride ceramic films were prepared by heating poly(organosilane) films at 550ŒC in NH3 atmosphere, followed by firing the resulted polymer films up to 1000ŒC in vacuum. The nitrogen incorporation took place in the reaction up to 550 to 650ŒC with ammonia, and the removal of methyl and other hydrocarbon groups appeared in the firing process up to 1000ŒC. Poly(dimethyl-diphenylsilane) films were spin-coated onto aluminum plates, sapphire (Al2O3) plates, or NaCl plates from its chlorobenzene solution. The coated films were soft-baked at 90ŒC for 30 minutes on a hot plate, and then the specimen as sealed in a quartz tube with ammonia (NH3 pressure: 12 cmHg). The specimen sealed in a quartz tube was heated up to 550ŒC slowly for the aluminum plate, or 650ŒC for a sapphire or NaCl plate.