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Method for the Preparation of Metal/Compound Thin Film Composites

IP.com Disclosure Number: IPCOM000064258D
Original Publication Date: 1985-Jun-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Lee, WY Salem, J Sequeda, FO [+details]

Abstract

A method for the preparation of metal/compound (oxide, nitride and sulfide) thin film composites involves the simultaneous evaporation of low melting materials. During the evaporation step a high melting point material is formed which is subsequently deposited as part of the thin film compound. This process circumvents or avoids the use of high melting point source materials in forming thin film composites which have several applications including optical recording media. A specific example is the thin film composite containing a Te, Ge and GeO2 mixture. In this example GeO2 is a high melting point material. The composite film is formed by the simultaneous thermal evaporation of TeO2, Te and Ge which are all low melting point materials.