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RESISTIVE MATERIAL FOR GaAs INTEGRATED CIRCUIT APPLICATIONS

IP.com Disclosure Number: IPCOM000064259D
Original Publication Date: 1985-Jun-01
Included in the Prior Art Database: 2005-Feb-18

Publishing Venue

IBM

Related People

Authors:
Price, WH Tiwari, S [+details]

Abstract

The reaction of deposited platinum with GaAs in the 300 to 500ŒC temperature range provides a resistive material in the 10 to 100 L/cm range. When platinum deposited on clean GaAs is reacted in the 300 to 500ŒC temperature range, a resistivity of approximately 40 to 120 mL-cm results with a temperature coefficient of resistivity of approximately 10% per 100ŒC change in temperature. The approximate thickness of the reacted layer is twice the initial platinum thickness, and the resistivity is an approximately linearly increasing function of temperature. The reaction halts after complete consumption. The predominant composition is PtAs2, Pt2Ga and PtGa. The resistivity does not change appreciably on further heat cycling at these temperatures.